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K7A801809A Datasheet, Samsung semiconductor

K7A801809A sram equivalent, 256kx36 & 512kx18 synchronous sram.

K7A801809A Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 395.05KB)

K7A801809A Datasheet
K7A801809A Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 395.05KB)

K7A801809A Datasheet

Features and benefits


* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Contro.

Application

GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each b.

Description

The K7A803609A and K7A801809A are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address a.

Image gallery

K7A801809A Page 1 K7A801809A Page 2 K7A801809A Page 3

TAGS

K7A801809A
256Kx36
512Kx18
Synchronous
SRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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